?2001 Fairchild Semiconductor Corporation
Rev. A, March 2001
FYP2006DN
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings
T
C=25°°°°C unless otherwise noted
Thermal Characteristics
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol Parameter Value Units
VRRM
Maximum Repetitive Reverse Voltage 60 V
VR
Maximum DC Reverse Voltage 60 V
IF(AV)
Average Rectified Forward Current @ TC
= 134
°C20 A
IFSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
200 A
TJ, TSTG
Operating Junction and Storage Temperature -65 to +150
°C
Symbol Parameter Value Units
RθJC
Maximum Thermal Resistance, Junction to Case (per diode) 1.7
°C/W
Symbol Parameter Value Units
VFM *
Maximum Instantaneous Forward Voltage
IF
= 10A
IF
= 10A
IF
= 20A
IF
= 20A
TC
= 25
°C
0.58
TC
= 125
°C
0.52
TC
= 25
°C
0.71
TC
= 125
°C
0.65
V
IRM *
Maximum Instantaneous Reverse Current
@ rated VR
T
C
= 25
°
C
1
TC
= 125
°C
50
mA
FYP2006DN
Features
? Low forward voltage drop
? High frequency properties and switching speed
? Guard ring for over-voltage protection
Applications
? Switched mode power supply
? Freewheeling diodes
TO-220
1 2 3
1. Anode 2.Cathode 3. Anode